2008. 3. 10 1/2 semiconductor technical data MMBTA44 epitaxial planar npn transistor revision no : 2 high voltage application. features high breakdown voltage. collector power dissipation : p c =350mw. maximum rating (ta=25 ) electrical characteristics (ta=25 ) *pulse test : pulse width 300 s, duty cycle 2.0% characteristic symbol rating unit collector-basevoltage v cbo 450 v collector-emittervoltage v ceo 400 v emitter-base voltage v ebo 6 v collector current i c 300 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 450 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 400 - - v collector-emitter breakdown voltage (2) v (br)ces i c =100 a, i b =0 450 - - v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6.0 - - v collector cut off current i cbo v cb =400v, i e =0 - - 100 na collector cut off current i ces v ce =400v, i b =0 - - 500 na emitter cutoff current i ebo v eb =4v, i c =0 - - 100 na dc current gain * h fe v ce =10v, i c =1ma 40 - - v ce =10v, i c =10ma 50 - 200 v ce =10v, i c =50ma 45 - - v ce =10v, i c =100ma 40 - - collector-emitter saturation voltage * v ce(sat) 1 i c =1ma, i b =0.1ma - - 0.4 v v ce(sat) 2 i c =10ma, i b =1ma - - 0.5 v ce(sat) 3 i c =50ma, i b =5ma - - 0.75 base-emitter saturation voltage * v be(sat) i c =10ma, i b =1ma - - 0.75 v transition frequency f t v ce =10v, i c =10ma, f=10mhz 20 - - mhz collector output capacitance c ob v cb =20v, i e =0, f=1mhz - - 7 pf input capacitance c ib v eb =0.5v, i c =0, f=1mhz - - 130 pf * : package mounted on 99.5% alumina 10 8 0.6mm.
2008. 3. 10 2/2 MMBTA44 revision no : 2
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